MJE5182 NPN Transistor

The MJE5182 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJE5182 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE5182 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJE5182 transistor as follows.

MJE5182 Transistor Specification

Transistor Code		MJE5182
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	65W
Collector-Base Voltage (Maximum)	VCB	160V
Collector-Emitter Voltage (Maximum)	VCE	160V
Collector Current (Maximum)	IC	6A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		15
Transition Frequency	FT	1MHz

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