The MJE4343G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJE4343G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The MJE4343G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.
Circuit diagram symbol of the MJE4343G transistor as follows.
| Transistor Code | MJE4343G | |
|---|---|---|
| Transistor Type | BJT | |
| Transistor Polarity | NPN | |
| Transistor Material | Silicon(SI) | |
| Package | SOT93 TO247 | |
| Transistor SMD Code | MJE4343 | |
| Collector Power Dissipation (Maximum) | PC | 125W |
| Collector-Base Voltage (Maximum) | VCB | 160V |
| Collector-Emitter Voltage (Maximum) | VCE | 160V |
| Collector Current (Maximum) | IC | 16A |
| Operating Junction Temperature (Maximum) | TJ | 150°C |
| Emitter-Base Voltage (Maximum) | VEB | 7V |
| Forward Current Transfer Ratio (hFE Value) | 8 | |
| Transition Frequency | FT | 1MHz |
| Collector Capacitance | CC | 800pF |
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