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MJE3312 PNP Transistor

The MJE3312 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MJE3312 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE3312 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MJE3312 transistor as follows.

Circuit diagram symbol of the MJE3312 transistor

MJE3312 Transistor Specification

Transistor Code MJE3312
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO126
Collector Power Dissipation (Maximum) PC 15W
Collector-Base Voltage (Maximum) VCB 80V
Collector-Emitter Voltage (Maximum) VCE 80V
Collector Current (Maximum) IC 4A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 2000
Transition Frequency FT 20MHz

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