MJE3055TG NPN Transistor

The MJE3055TG is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJE3055TG transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE3055TG transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJE3055TG transistor as follows.

MJE3055TG Transistor Specification

Transistor Code		MJE3055TG
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220AB
Transistor SMD Code		MJE3055T
Collector Power Dissipation (Maximum)	PC	75W
Collector-Base Voltage (Maximum)	VCB	70V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	2MHz

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