MJE271G PNP Transistor

The MJE271G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MJE271G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE271G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MJE271G transistor as follows.

MJE271G Transistor Specification

Transistor Code		MJE271G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO126
Transistor SMD Code		JE271
Collector Power Dissipation (Maximum)	PC	15W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		500
Transition Frequency	FT	6MHz

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