MJE210G PNP Transistor

The MJE210G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MJE210G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE210G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MJE210G transistor as follows.

MJE210G Transistor Specification

Transistor Code		MJE210G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO126
Transistor SMD Code		JE210
Collector Power Dissipation (Maximum)	PC	15W
Collector-Base Voltage (Maximum)	VCB	25V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	8V
Forward Current Transfer Ratio (hFE Value)		45
Transition Frequency	FT	65MHz
Collector Capacitance	CC	120pF

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