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MJE210G PNP Transistor

The MJE210G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MJE210G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE210G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MJE210G transistor as follows.

Circuit diagram symbol of the MJE210G transistor

MJE210G Transistor Specification

Transistor Code MJE210G
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO126
Transistor SMD Code JE210
Collector Power Dissipation (Maximum) PC 15W
Collector-Base Voltage (Maximum) VCB 25V
Collector-Emitter Voltage (Maximum) VCE 40V
Collector Current (Maximum) IC 5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 8V
Forward Current Transfer Ratio (hFE Value) 45
Transition Frequency FT 65MHz
Collector Capacitance CC 120pF

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