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MJE2020 NPN Transistor

The MJE2020 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJE2020 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE2020 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJE2020 transistor as follows.

Circuit diagram symbol of the MJE2020 transistor

MJE2020 Transistor Specification

Transistor Code MJE2020
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO126
Collector Power Dissipation (Maximum) PC 80W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 40V
Collector Current (Maximum) IC 5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 25
Transition Frequency FT 3MHz

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