MJE2011 PNP Transistor

The MJE2011 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MJE2011 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE2011 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MJE2011 transistor as follows.

MJE2011 Transistor Specification

Transistor Code		MJE2011
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO126
Collector Power Dissipation (Maximum)	PC	80W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		25
Transition Frequency	FT	3MHz

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