MJE200G NPN Transistor

The MJE200G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJE200G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE200G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJE200G transistor as follows.

MJE200G Transistor Specification

Transistor Code		MJE200G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO126
Transistor SMD Code		JE200
Collector Power Dissipation (Maximum)	PC	15W
Collector-Base Voltage (Maximum)	VCB	25V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	8V
Forward Current Transfer Ratio (hFE Value)		45
Transition Frequency	FT	65MHz
Collector Capacitance	CC	80pF

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