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MJE182G NPN Transistor

The MJE182G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJE182G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE182G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJE182G transistor as follows.

Circuit diagram symbol of the MJE182G transistor

MJE182G Transistor Specification

Transistor Code MJE182G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO126
Transistor SMD Code JE182
Collector Power Dissipation (Maximum) PC 12.5W
Collector-Base Voltage (Maximum) VCB 100V
Collector-Emitter Voltage (Maximum) VCE 80V
Collector Current (Maximum) IC 3A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 7V
Forward Current Transfer Ratio (hFE Value) 12
Transition Frequency FT 50MHz
Collector Capacitance CC 40pF

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