MJE16002 NPN Transistor

The MJE16002 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJE16002 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE16002 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJE16002 transistor as follows.

MJE16002 Transistor Specification

Transistor Code		MJE16002
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	80W
Collector-Base Voltage (Maximum)	VCB	850V
Collector-Emitter Voltage (Maximum)	VCE	450V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		5
Collector Capacitance	CC	200pF

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