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MJE13009X9 NPN Transistor

The MJE13009X9 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJE13009X9 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE13009X9 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJE13009X9 transistor as follows.

Circuit diagram symbol of the MJE13009X9 transistor

MJE13009X9 Transistor Specification

Transistor Code MJE13009X9
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO3P
Transistor SMD Code BR13009X9
Collector Power Dissipation (Maximum) PC 90W
Collector-Base Voltage (Maximum) VCB 700V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 8A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 10
Transition Frequency FT 5MHz

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