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MJE13009P NPN Transistor

The MJE13009P is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJE13009P transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE13009P transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJE13009P transistor as follows.

Circuit diagram symbol of the MJE13009P transistor

MJE13009P Transistor Specification

Transistor Code MJE13009P
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO-3P TO-220
Collector Power Dissipation (Maximum) PC 80W
Collector-Base Voltage (Maximum) VCB 700V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 12A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 4MHz
Collector Capacitance CC 180pF

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More Transistors Datasheets in TO-3P_TO-220 Package

MJE13009K MJE13009K NPN Transistor