The MJE13009G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJE13009G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The MJE13009G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.
Circuit diagram symbol of the MJE13009G transistor as follows.
| Transistor Code | MJE13009G | |
|---|---|---|
| Transistor Type | BJT | |
| Transistor Polarity | NPN | |
| Transistor Material | Silicon(SI) | |
| Package | TO220 TO220F TO3P | |
| Collector Power Dissipation (Maximum) | PC | 80W |
| Collector-Base Voltage (Maximum) | VCB | 700V |
| Collector-Emitter Voltage (Maximum) | VCE | 400V |
| Collector Current (Maximum) | IC | 12A |
| Operating Junction Temperature (Maximum) | TJ | 150°C |
| Emitter-Base Voltage (Maximum) | VEB | 9V |
| Forward Current Transfer Ratio (hFE Value) | 8 | |
| Transition Frequency | FT | 4MHz |
| Collector Capacitance | CC | 180pF |
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