MJE13009D NPN Transistor

The MJE13009D is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJE13009D transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE13009D transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJE13009D transistor as follows.

MJE13009D Transistor Specification

Transistor Code		MJE13009D
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO-220
Collector Power Dissipation (Maximum)	PC	100W
Collector-Base Voltage (Maximum)	VCB	700V
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	12A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	9V
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	4MHz
Collector Capacitance	CC	180pF

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