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MJE13007M NPN Transistor

The MJE13007M is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJE13007M transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE13007M transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJE13007M transistor as follows.

Circuit diagram symbol of the MJE13007M transistor

MJE13007M Transistor Specification

Transistor Code MJE13007M
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO-220
Collector Power Dissipation (Maximum) PC 80W
Collector-Base Voltage (Maximum) VCB 700V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 8A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 8
Transition Frequency FT 4MHz
Collector Capacitance CC 80pF

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