MJE13005DRB NPN Transistor

The MJE13005DRB is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJE13005DRB transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE13005DRB transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJE13005DRB transistor as follows.

MJE13005DRB Transistor Specification

Transistor Code		MJE13005DRB
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO263
Collector Power Dissipation (Maximum)	PC	75W
Collector-Base Voltage (Maximum)	VCB	700V
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	9V
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	7MHz

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