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MJE13003P NPN Transistor

The MJE13003P is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJE13003P transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE13003P transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJE13003P transistor as follows.

Circuit diagram symbol of the MJE13003P transistor

MJE13003P Transistor Specification

Transistor Code MJE13003P
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO-251 TO-92 TO-126 TO-252
Collector Power Dissipation (Maximum) PC 25W
Collector-Base Voltage (Maximum) VCB 700V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 1.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 14
Transition Frequency FT 4MHz
Collector Capacitance CC 21pF

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More Transistors Datasheets in TO-251_TO-92_TO-126_TO-252 Package