MJE13003HV NPN Transistor

The MJE13003HV is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJE13003HV transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE13003HV transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJE13003HV transistor as follows.

MJE13003HV Transistor Specification

Transistor Code		MJE13003HV
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO126
Collector Power Dissipation (Maximum)	PC	20W
Collector-Base Voltage (Maximum)	VCB	900V
Collector-Emitter Voltage (Maximum)	VCE	530V
Collector Current (Maximum)	IC	1.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	9V
Forward Current Transfer Ratio (hFE Value)		15
Transition Frequency	FT	4MHz
Collector Capacitance	CC	21pF

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