MJE13003G6 NPN Transistor

The MJE13003G6 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJE13003G6 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE13003G6 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJE13003G6 transistor as follows.

MJE13003G6 Transistor Specification

Transistor Code		MJE13003G6
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO126F
Collector Power Dissipation (Maximum)	PC	30W
Collector-Base Voltage (Maximum)	VCB	600V
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	0.75A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	9V
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	5MHz

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