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MJE13003G5 NPN Transistor

The MJE13003G5 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJE13003G5 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE13003G5 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJE13003G5 transistor as follows.

Circuit diagram symbol of the MJE13003G5 transistor

MJE13003G5 Transistor Specification

Transistor Code MJE13003G5
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO126
Collector Power Dissipation (Maximum) PC 30W
Collector-Base Voltage (Maximum) VCB 600V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 0.75A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 10
Transition Frequency FT 5MHz

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