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MJE13003-E NPN Transistor

The MJE13003-E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJE13003-E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE13003-E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJE13003-E transistor as follows.

Circuit diagram symbol of the MJE13003-E transistor

MJE13003-E Transistor Specification

Transistor Code MJE13003-E
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO-126S TO-92
Collector Power Dissipation (Maximum) PC 20W
Collector-Base Voltage (Maximum) VCB 700V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 1.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 14
Transition Frequency FT 4MHz
Collector Capacitance CC 21pF

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More Transistors Datasheets in TO-126S_TO-92 Package

MJE13002-E MJE13002-E NPN Transistor