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MJE13001H NPN Transistor

The MJE13001H is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJE13001H transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE13001H transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJE13001H transistor as follows.

Circuit diagram symbol of the MJE13001H transistor

MJE13001H Transistor Specification

Transistor Code MJE13001H
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92 TO92S
Collector Power Dissipation (Maximum) PC 1W
Collector-Base Voltage (Maximum) VCB 700V
Collector-Emitter Voltage (Maximum) VCE 480V
Collector Current (Maximum) IC 0.18A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 15

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More Transistors Datasheets in TO92_TO92S Package

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