MJE12007 NPN Transistor

The MJE12007 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJE12007 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE12007 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJE12007 transistor as follows.

MJE12007 Transistor Specification

Transistor Code		MJE12007
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	65W
Collector-Base Voltage (Maximum)	VCB	1500V
Collector-Emitter Voltage (Maximum)	VCE	750V
Collector Current (Maximum)	IC	2.5A
Operating Junction Temperature (Maximum)	TJ	125°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		50
Transition Frequency	FT	4MHz
Collector Capacitance	CC	50pF

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