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MJD6039T4 NPN Transistor

The MJD6039T4 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJD6039T4 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJD6039T4 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJD6039T4 transistor as follows.

Circuit diagram symbol of the MJD6039T4 transistor

MJD6039T4 Transistor Specification

Transistor Code MJD6039T4
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO252
Collector Power Dissipation (Maximum) PC 20W
Collector-Base Voltage (Maximum) VCB 80V
Collector-Emitter Voltage (Maximum) VCE 80V
Collector Current (Maximum) IC 4A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 1000
Collector Capacitance CC 100pF

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