MJD45H11T4G PNP Transistor

The MJD45H11T4G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MJD45H11T4G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJD45H11T4G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MJD45H11T4G transistor as follows.

MJD45H11T4G Transistor Specification

Transistor Code		MJD45H11T4G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO-252
Transistor SMD Code		J45H11G
Collector Power Dissipation (Maximum)	PC	20W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	90MHz
Collector Capacitance	CC	130pF

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