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MJD45H11-1G PNP Transistor

The MJD45H11-1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MJD45H11-1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJD45H11-1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MJD45H11-1G transistor as follows.

Circuit diagram symbol of the MJD45H11-1G transistor

MJD45H11-1G Transistor Specification

Transistor Code MJD45H11-1G
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO-251
Transistor SMD Code J45H11G
Collector Power Dissipation (Maximum) PC 20W
Collector-Base Voltage (Maximum) VCB 80V
Collector-Emitter Voltage (Maximum) VCE 80V
Collector Current (Maximum) IC 8A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 90MHz
Collector Capacitance CC 130pF

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More Transistors Datasheets in TO-251 Package

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