The MJD45H11-1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MJD45H11-1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The MJD45H11-1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.
Circuit diagram symbol of the MJD45H11-1G transistor as follows.
Transistor Code | MJD45H11-1G | |
---|---|---|
Transistor Type | BJT | |
Transistor Polarity | PNP | |
Transistor Material | Silicon(SI) | |
Package | TO-251 | |
Transistor SMD Code | J45H11G | |
Collector Power Dissipation (Maximum) | PC | 20W |
Collector-Base Voltage (Maximum) | VCB | 80V |
Collector-Emitter Voltage (Maximum) | VCE | 80V |
Collector Current (Maximum) | IC | 8A |
Operating Junction Temperature (Maximum) | TJ | 150°C |
Emitter-Base Voltage (Maximum) | VEB | 5V |
Forward Current Transfer Ratio (hFE Value) | 40 | |
Transition Frequency | FT | 90MHz |
Collector Capacitance | CC | 130pF |
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