MJD31C1G NPN Transistor

The MJD31C1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJD31C1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJD31C1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJD31C1G transistor as follows.

MJD31C1G Transistor Specification

Transistor Code		MJD31C1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO-251
Transistor SMD Code		J31C1G
Collector Power Dissipation (Maximum)	PC	15W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	3MHz

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