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MJD2955G PNP Transistor

The MJD2955G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MJD2955G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJD2955G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MJD2955G transistor as follows.

Circuit diagram symbol of the MJD2955G transistor

MJD2955G Transistor Specification

Transistor Code MJD2955G
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO-252
Transistor SMD Code J2955G
Collector Power Dissipation (Maximum) PC 20W
Collector-Base Voltage (Maximum) VCB 70V
Collector-Emitter Voltage (Maximum) VCE 60V
Collector Current (Maximum) IC 10A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 2MHz

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