MJD253T4G PNP Transistor

The MJD253T4G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MJD253T4G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJD253T4G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MJD253T4G transistor as follows.

MJD253T4G Transistor Specification

Transistor Code		MJD253T4G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO-252
Transistor SMD Code		J253G
Collector Power Dissipation (Maximum)	PC	12.5W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	40MHz
Collector Capacitance	CC	50pF

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