MJD200T4G NPN Transistor

The MJD200T4G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJD200T4G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJD200T4G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJD200T4G transistor as follows.

MJD200T4G Transistor Specification

Transistor Code		MJD200T4G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO-252
Transistor SMD Code		J200G
Collector Power Dissipation (Maximum)	PC	12.5W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	25V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	8V
Forward Current Transfer Ratio (hFE Value)		45
Transition Frequency	FT	65MHz
Collector Capacitance	CC	80pF

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