MJD13001 NPN Transistor

The MJD13001 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJD13001 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJD13001 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJD13001 transistor as follows.

MJD13001 Transistor Specification

Transistor Code		MJD13001
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		3001A_3001B_3001C_3001D_3001E_
Collector Power Dissipation (Maximum)	PC	0.3W
Collector-Base Voltage (Maximum)	VCB	700V
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	0.2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	8V
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	8MHz

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