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MJD128T4G PNP Transistor

The MJD128T4G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MJD128T4G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJD128T4G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MJD128T4G transistor as follows.

Circuit diagram symbol of the MJD128T4G transistor

MJD128T4G Transistor Specification

Transistor Code MJD128T4G
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO-252
Transistor SMD Code J128G
Collector Power Dissipation (Maximum) PC 20W
Collector-Base Voltage (Maximum) VCB 120V
Collector-Emitter Voltage (Maximum) VCE 120V
Collector Current (Maximum) IC 8A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 1000
Transition Frequency FT 4MHz
Collector Capacitance CC 300pF

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