MJD128 PNP Transistor

The MJD128 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MJD128 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJD128 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MJD128 transistor as follows.

MJD128 Transistor Specification

Transistor Code		MJD128
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		DPAK
Collector Power Dissipation (Maximum)	PC	20W
Collector-Base Voltage (Maximum)	VCB	120V
Collector-Emitter Voltage (Maximum)	VCE	120V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		300
Transition Frequency	FT	4MHz
Collector Capacitance	CC	300pF

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