MJD122G NPN Transistor

The MJD122G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJD122G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJD122G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJD122G transistor as follows.

MJD122G Transistor Specification

Transistor Code		MJD122G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO-252
Transistor SMD Code		J112G
Collector Power Dissipation (Maximum)	PC	20W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		1000
Transition Frequency	FT	4MHz
Collector Capacitance	CC	200pF

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