MJD112T4G NPN Transistor

The MJD112T4G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJD112T4G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJD112T4G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJD112T4G transistor as follows.

MJD112T4G Transistor Specification

Transistor Code		MJD112T4G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO-252
Transistor SMD Code		J112G
Collector Power Dissipation (Maximum)	PC	20W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		1000
Transition Frequency	FT	25MHz
Collector Capacitance	CC	100pF

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