MJB5742T4G NPN Transistor

The MJB5742T4G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJB5742T4G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJB5742T4G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJB5742T4G transistor as follows.

MJB5742T4G Transistor Specification

Transistor Code		MJB5742T4G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO-263
Transistor SMD Code		B5742
Collector Power Dissipation (Maximum)	PC	100W
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	8V
Forward Current Transfer Ratio (hFE Value)		50

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