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MJ8501 NPN Transistor

The MJ8501 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJ8501 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJ8501 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJ8501 transistor as follows.

Circuit diagram symbol of the MJ8501 transistor

MJ8501 Transistor Specification

Transistor Code MJ8501
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO3
Collector Power Dissipation (Maximum) PC 125W
Collector-Base Voltage (Maximum) VCB 1400V
Collector-Emitter Voltage (Maximum) VCE 800V
Collector Current (Maximum) IC 2.5A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 8V
Forward Current Transfer Ratio (hFE Value) 7.5
Collector Capacitance CC 250pF

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