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MJ802G NPN Transistor

The MJ802G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJ802G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJ802G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJ802G transistor as follows.

Circuit diagram symbol of the MJ802G transistor

MJ802G Transistor Specification

Transistor Code MJ802G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO3
Collector Power Dissipation (Maximum) PC 200W
Collector-Base Voltage (Maximum) VCB 100V
Collector-Emitter Voltage (Maximum) VCE 90V
Collector Current (Maximum) IC 30A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 4V
Forward Current Transfer Ratio (hFE Value) 25
Transition Frequency FT 2MHz

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