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MJ14002G NPN Transistor

The MJ14002G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJ14002G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJ14002G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJ14002G transistor as follows.

Circuit diagram symbol of the MJ14002G transistor

MJ14002G Transistor Specification

Transistor Code MJ14002G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO3
Collector Power Dissipation (Maximum) PC 300W
Collector-Base Voltage (Maximum) VCB 80V
Collector-Emitter Voltage (Maximum) VCE 80V
Collector Current (Maximum) IC 60A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 15
Collector Capacitance CC 2000pF

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