MJ12005 NPN Transistor

The MJ12005 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJ12005 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJ12005 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJ12005 transistor as follows.

MJ12005 Transistor Specification

Transistor Code		MJ12005
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	100W
Collector-Base Voltage (Maximum)	VCB	1500V
Collector-Emitter Voltage (Maximum)	VCE	750V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	200°C
Forward Current Transfer Ratio (hFE Value)		5

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