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MJ12005 NPN Transistor

The MJ12005 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJ12005 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJ12005 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJ12005 transistor as follows.

Circuit diagram symbol of the MJ12005 transistor

MJ12005 Transistor Specification

Transistor Code MJ12005
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO3
Collector Power Dissipation (Maximum) PC 100W
Collector-Base Voltage (Maximum) VCB 1500V
Collector-Emitter Voltage (Maximum) VCE 750V
Collector Current (Maximum) IC 8A
Operating Junction Temperature (Maximum) TJ 200°C
Forward Current Transfer Ratio (hFE Value) 5

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