MJ12002 NPN Transistor

The MJ12002 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJ12002 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJ12002 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJ12002 transistor as follows.

MJ12002 Transistor Specification

Transistor Code		MJ12002
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	100W
Collector-Emitter Voltage (Maximum)	VCE	1500V
Collector Current (Maximum)	IC	2.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	2MHz

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