MJ10200 NPN Transistor

The MJ10200 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJ10200 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJ10200 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJ10200 transistor as follows.

MJ10200 Transistor Specification

Transistor Code		MJ10200
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SPECIAL
Collector Power Dissipation (Maximum)	PC	500W
Collector-Base Voltage (Maximum)	VCB	300V
Collector-Emitter Voltage (Maximum)	VCE	250V
Collector Current (Maximum)	IC	200A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	8V
Forward Current Transfer Ratio (hFE Value)		75
Collector Capacitance	CC	4000pF

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