MJ10050 NPN Transistor

The MJ10050 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJ10050 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJ10050 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJ10050 transistor as follows.

MJ10050 Transistor Specification

Transistor Code		MJ10050
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SPECIAL
Collector Power Dissipation (Maximum)	PC	500W
Collector-Base Voltage (Maximum)	VCB	900V
Collector-Emitter Voltage (Maximum)	VCE	850V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	8V
Forward Current Transfer Ratio (hFE Value)		35
Collector Capacitance	CC	4000pF

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