MJ10004P NPN Transistor

The MJ10004P is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJ10004P transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJ10004P transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJ10004P transistor as follows.

MJ10004P Transistor Specification

Transistor Code		MJ10004P
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	175W
Collector-Base Voltage (Maximum)	VCB	450V
Collector-Emitter Voltage (Maximum)	VCE	350V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	8V
Forward Current Transfer Ratio (hFE Value)		40
Collector Capacitance	CC	325pF

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