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MJ10004P NPN Transistor

The MJ10004P is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJ10004P transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJ10004P transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJ10004P transistor as follows.

Circuit diagram symbol of the MJ10004P transistor

MJ10004P Transistor Specification

Transistor Code MJ10004P
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO3
Collector Power Dissipation (Maximum) PC 175W
Collector-Base Voltage (Maximum) VCB 450V
Collector-Emitter Voltage (Maximum) VCE 350V
Collector Current (Maximum) IC 20A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 8V
Forward Current Transfer Ratio (hFE Value) 40
Collector Capacitance CC 325pF

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