MH8212 NPN Transistor

The MH8212 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MH8212 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MH8212 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MH8212 transistor as follows.

MH8212 Transistor Specification

Transistor Code		MH8212
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	15W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		50
Transition Frequency	FT	50MHz

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