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MG75H2DL1 NPN Transistor

The MG75H2DL1 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MG75H2DL1 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MG75H2DL1 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MG75H2DL1 transistor as follows.

Circuit diagram symbol of the MG75H2DL1 transistor

MG75H2DL1 Transistor Specification

Transistor Code MG75H2DL1
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package X99
Collector Power Dissipation (Maximum) PC 350W
Collector-Base Voltage (Maximum) VCB 600V
Collector-Emitter Voltage (Maximum) VCE 500V
Collector Current (Maximum) IC 75A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 80
Collector Capacitance CC 670pF

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