MG6330-R NPN Transistor

The MG6330-R is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MG6330-R transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MG6330-R transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MG6330-R transistor as follows.

MG6330-R Transistor Specification

Transistor Code		MG6330-R
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO-3P
Collector Power Dissipation (Maximum)	PC	200W
Collector-Base Voltage (Maximum)	VCB	260V
Collector-Emitter Voltage (Maximum)	VCE	260V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		70
Transition Frequency	FT	60MHz
Collector Capacitance	CC	250pF

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