MG30G1BL2 NPN Transistor

The MG30G1BL2 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MG30G1BL2 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MG30G1BL2 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MG30G1BL2 transistor as follows.

MG30G1BL2 Transistor Specification

Transistor Code		MG30G1BL2
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		X99
Collector Power Dissipation (Maximum)	PC	250W
Collector-Base Voltage (Maximum)	VCB	600V
Collector-Emitter Voltage (Maximum)	VCE	450V
Collector Current (Maximum)	IC	30A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		100
Collector Capacitance	CC	250pF

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