ME8001 NPN Transistor

The ME8001 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the ME8001 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ME8001 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the ME8001 transistor as follows.

ME8001 Transistor Specification

Transistor Code		ME8001
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO106
Collector Power Dissipation (Maximum)	PC	0.4W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	30V
Operating Junction Temperature (Maximum)	TJ	165°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	100MHz
Collector Capacitance	CC	12pF

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